inchange semiconductor product specification silicon pnp darlington power transistors TIP105/106/107 description ? with to-220c package ? darlington ?high dc current gain ? low collector saturation voltage ? complement to type tip100/101/102 applications ?for industrial use pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit TIP105 -60 tip106 -80 v cbo collector-base voltage tip107 open emitter -100 v TIP105 -60 tip106 -80 v ceo collector-emitter voltage tip107 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current-dc -8 a i cm collector current-peak -15 a i b base current-dc -1 a t c =25 ?? 80 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp darlington power transistors TIP105/106/107 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit TIP105 -60 tip106 -80 v ceo(sus) collector-emitter sustaining voltage tip107 i c =-30ma, i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-3a ,i b =-6ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-8a ,i b =-80ma -2.5 v v be base-emitter on voltage i c =-8a ; v ce =-4v -2.8 v TIP105 v cb =-60v, i e =0 tip106 v cb =-80v, i e =0 i cbo collector cut-off current tip107 v cb =-100v, i e =0 -50 | a TIP105 v ce =-30v, i b =0 tip106 v ce =-40v, i b =0 i ceo collector cut-off current tip107 v ce =-50v, i b =0 -50 | a i ebo emitter cut-off current v eb =-5v; i c =0 -2 ma h fe-1 dc current gain i c =-3a ; v ce =-4v 1000 20000 h fe-2 dc current gain i c =-8a ; v ce =-4v 200 c ob output capacitance i e =0 ; v cb =-10v,f=0.1mhz 300 pf
inchange semiconductor product specification 3 silicon pnp darlington power transistors TIP105/106/107 package outline fig.2 outline dimensions
|
